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DS23001 Rev. 8 - 2
1 of 3
1N5817-1N5819
www.diodes.com
Diodes Incorporated
Features
1N5817 - 1N5819
1.0A SCHOTTKY BARRIER RECTIFIER
A
A
B
C
D
DO-41 Plastic
Dim Min Max
A
25.40
B
4.06 5.21
C
0.71 0.864
D
2.00 2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
@ TA
= 25C unless otherwise specified
Guard Ring Die Construction for Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Application
Lead Free Finish, RoHS Compliant (Note 5)
Mechanical Data
Case: DO-41
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish
Tin. Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Ordering Information: See Page 2
Marking: Type Number and Date Code
Weight: 0.3 grams (approximate)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol 1N5817
1N5818
1N5819 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
20
30
40
V
RMS Reverse Voltage
VR(RMS)
14
21
28
V
Average Rectified Output Current
(Note 1) @ TL
= 90C
IO
1.0
A
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
IFSM
25
A
Forward Voltage (Note 2)
@ IF
= 1.0A
@ IF
= 3.0A
VFM
0.450
0.750
0.550
0.875
0.60
0.90
V
Peak Reverse Leakage Current
@ TA
= 25C
at Rated DC Blocking Voltage (Note 2) @ TA
= 100C
IRM
1.0
10
mA
Typical Total Capacitance (Note 3)
CT
110
pF
Typical Thermal Resistance Junction to Lead (Note 4)
RJL
15
C/W
Typical Thermal Resistance Junction to Ambient
RJA
50
Operating and Storage Temperature Range
Tj,
TSTG
-65 to +125
C
Notes: 1. Measured at ambient temperature at a distance of 9.5mm from the case.
2. Short duration test pulse used to minimize self-heating effect.
3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
4. Thermal resistance from junction to lead vertical P.C.B. mounted, 0.375" (9.5mm) lead length with 1.5 x 1.5" (38 x 38mm)
copper pads.
5. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see
EU Directive Annex Notes 5 and 7.
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相关代理商/技术参数
1N5819-T/R 制造商:Micro Commercial Components (MCC) 功能描述:Diode Schottky 40V 1A 2-Pin DO-41 T/R
1N5819-T3 制造商:WTE 制造商全称:Won-Top Electronics 功能描述:1.0A SCHOTTKY BARRIER DIODE
1N5819TA 制造商:World Products 功能描述:
1N5819-TB 制造商:WTE 制造商全称:Won-Top Electronics 功能描述:1.0A SCHOTTKY BARRIER RECTIFIER
1N5819-T-CUT TAPE 制造商:DIODES 功能描述:1N5819 Series 40 V 1 A Through Hole Schottky Barrier Rectifier - DO-41
1N5819-T-F 制造商:Zetex / Diodes Inc 功能描述:Diode Schottky 40V 1A 2-Pin DO-41 T/R
1N5819T-G 功能描述:肖特基二极管与整流器 VRRM=40V, IAV=1.0A RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
1N5819-TP 功能描述:肖特基二极管与整流器 1.0A 40V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel